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KM44C1000D, KM44V1000D
CMOS DRAM
1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in 3.3V Low power version. This 1Mx4 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high performance microprocessor systems.
FEATURES
* Part Identification - KM44C1000D/D-L(5V, 1K Ref.) - KM44V1000D/D-L(3.3V, 1K Ref.)
* Fast Page Mode operation * CAS-before-RAS refresh capability * RAS-only and Hidden refresh capability * Self-refresh capability (3.3V, L-ver only) * Fast parallel test mode capability * TTL(5V)/LVTTL(3.3V) compatible inputs and outputs * Early write or output enable controlled write
* Active Power Dissipation Unit : mW Speed -5 -6 -7 3.3V 220 200 5V 470 415 360
* JEDEC Standard pinout * Available in 26(20)-pin SOJ 300mil and TSOP(II) 300mil packages * Single +5V10% power supply(5V product) * Single +3.3V0.3V power supply(3.3V product)
FUNCTIONAL BLOCK DIAGRAM
* Refresh Cycles Part NO. KM44C1000D KM44V1000D Refresh cycle 1K Refresh Period Normal 16ms L-ver 128ms
Refresh Timer Refresh Control Row Decoder Sense Amps & I/O Data in Buffer RAS CAS W Control Clocks VBB Generator Vcc Vss
* Performance Range Speed -5 -6 -7
Refresh Counter
tRAC
50ns 60ns 70ns
tCAC
15ns 15ns 20ns
tRC
90ns 110n 130n
tPC
35ns 40ns 45ns
Remark 5V only 5V/3.3V 5V/3.3V
A0~A9 Col. Address Buffer Row Address Buffer
Memory Array 1,048,576 x4 Cells
DQ0 to DQ3 Data out Buffer
Column Decoder
OE
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
KM44C1000D, KM44V1000D
CMOS DRAM
PIN CONFIGURATION (Top Views)
*KM44C/V1000DJ
*KM44C/V1000DT
DQ0 DQ1 W RAS A9 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
VSS DQ3 DQ2 CAS OE A8 A7 A6 A5 A4
DQ0 DQ1 W RAS A9 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
VSS DQ3 DQ2 CAS OE A8 A7 A6 A5 A4
( SOJ )
( TSOP-II )
Pin Name A0 - A9 DQ0 - 3 VSS RAS CAS W OE VCC
Pin function Address Inputs Data In/out Ground Row Address Strobe Column Address Strobe Read/Write Input Data Output Enable Power(+5V) Power(+3.3V)
KM44C1000D, KM44V1000D
ABSOLUTE MAXIMUM RATINGS
Parameter Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol 3.3V VIN,VOUT VCC Tstg PD IOS -0.5 to +4.6 -0.5 to +4.6 -55 to +150 600 50 Rating 5V
CMOS DRAM
Units -1 to +7.0 -1 to +7.0 -55 to +150 600 50 V V C mW mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70C)
Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol Min VCC VSS VIH VIL 3.0 0 2.0 -0.3*2 3.3V Typ 3.3 0 Max 3.6 0 VCC+0.3*1 0.8 Min 4.5 0 2.4 -0.1*2 5V Typ 5.0 0 Max 5.5 0 VCC+1.0*1 0.8 V V V V Units
*1 : VCC +1.3V/15ns(3.3V), VCC +2.0V/20ns(5V), Pulse width is measured at VCC *2 : - 1.3V/15ns(3.3V), - 2.0V/20ns(5V), Pulse width is measured at VSS
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter Input Leakage Current (Any input 0VINVCC+0.3V, all other input pins not under test=0 Volt) 3.3V Output Leakage Current (Data out is disabled, 0VVOUTVCC) Output High Voltage Level(IOH=-2mA) Output Low Voltage Level(IOL=2mA) Input Leakage Current (Any input 0VINVCC+0.5V, all other input pins not under test=0 Volt) 5V Output Leakage Current (Data out is disabled, 0VVOUTVCC) Output High Voltage Level(IOH=-5mA) Output Low Voltage Level(IOL=4.2mA) Symbol II(L) IO(L) VOH VOL II(L) IO(L) VOH VOL Min -5 -5 2.4 -5 -5 2.4 Max 5 5 0.4 5 5 0.4 Units uA uA V V uA uA V V
KM44C1000D, KM44V1000D
Max KM44V1000D ICC1 ICC2 ICC3 Dont Care Dont Care Dont Care -5 -6 -7 Dont Care -5 -6 -7 -5 -6 -7 Dont Care -5 -6 -7 Dont Care Dont Care 60 55 1 60 55 45 40 0.5 100 60 55 200 150
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Recommend operating conditions unless otherwise noted.)
Symbol Power Speed Units KM44C1000D 85 75 65 2 85 75 65 65 55 45 1 200 85 75 65 300 mA mA mA mA mA mA mA mA mA mA mA uA mA mA mA uA uA
ICC4
Dont Care Normal L Dont Care L L
ICC5
ICC6 ICC7 ICCS
ICC1* : Operating Current (RAS and CAS cycling @tRC=min.) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.) ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.) ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V) ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min) ICC7 : Battery back-up current, Average power supply current, Battery back-up mode Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V, DQ=Dont Care, TRC=125us(L-ver.), TRAS=TRASmin~300ns ICCS : Self refresh current RAS=CAS=VIL, W=OE =A0 ~ A9=VCC-0.2V or 0.2V DQ0 ~ DQ3=VCC-0.2V, 0.2V or OPEN
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 ICC6 and ICC7, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one fast page mode cycle time, tPC.
KM44C1000D, KM44V1000D
CAPACITANCE (TA=25C, VCC=5V or 3.3V, f=1MHz)
Parameter Input capacitance [A0 ~ A9] Input capacitance [RAS, CAS, W, OE] Output capacitance [DQ0 - DQ3] Symbol CIN1 CIN2 CDQ Min -
CMOS DRAM
Max 5 7 7 Units pF pF pF
AC CHARACTERISTICS (0CT70C, See note 1,2)
Test condition (5V device) : VCC=5.0V10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V Test condition (3.3V device) : VCC=3.3V0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address CAS to output in Low-Z Output buffer turn-off delay Transition time (rise and fall) RAS precharge time RAS pulse width RAS hold time CAS hold time CAS pulse width RAS to CAS delay time RAS to column address delay time CAS to RAS precharge time Row address set-up time Row address hold time Column address set-up time Column address hold time Column address to RAS lead time Read command set-up time Read command hold time referenced to CAS Read command hold time referenced to RAS Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time Note) *1 : 5V only Symbol Min -5*1 Max Min 110 152 50 15 25 0 0 3 30 50 15 50 15 20 15 5 0 10 0 10 25 0 0 0 10 10 15 13 10K 35 25 10K 12 50 0 0 3 40 60 15 60 15 20 15 5 0 10 0 10 30 0 0 0 10 10 15 15 10K 45 30 10K 12 50 60 15 30 0 0 3 50 70 20 70 20 20 15 5 0 10 0 15 35 0 0 0 15 15 15 15 10K 50 35 10K 17 50 -6 Max Min 130 177 70 20 35 7 Max ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 8 4 10 3,4,10 3,4,5 3,10 3 6 2 Units Notes
tRC tRWC tRAC tCAC tAA tCLZ tOFF tT tRP tRAS tRSH tCSH tCAS tRCD tRAD tCRP tASR tRAH tASC tCAH tRAL tRCS tRCH tRRH tWCH tWP tRWL tCWL
90 132
KM44C1000D, KM44V1000D
AC CHARACTERISTICS (0CTA70C, See note 2)
Parameter Data set-up time Data hold time Refresh period (Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge to W delay time CAS set-up time (CAS-before-RAS refresh) CAS hold time (CAS-before-RAS refresh) RAS to CAS precharge time CAS precharge time (C-B-R counter test cycle) Access time from CAS precharge Fast Page mode cycle time Fast Page read-modify-write cycle time CAS precharge time (Fast Page cycle) RAS pulse width (Fast Page cycle) RAS hold time from CAS precharge OE access time OE to data delay Out put buffer turn off delay time from OE OE command hold time Write command set-up time (Test mode in) Write command hold time (Test mode in) W to RAS precharge time (C-B-R refresh) W to RAS hold time (C-B-R refresh) RAS pulse width (C-B-R self refresh) RAS precharge time (C-B-R self refresh) CAS Hold time (C-B-R self refresh) Note) *1 : 5V only Symbol Min -5*1 Max Min 0 10 16 128 0 37 72 47 52 10 10 5 20 30 35 77 10 50 30 15 12 0 15 10 10 10 10 100 90 -50 12 12 0 15 10 10 10 10 100 110 -50 12 200K 40 82 10 60 35 15 17 0 20 10 10 10 10 100 130 -50 200K 0 37 82 52 57 10 10 5 20 35 45 97 10 70 40 16 128 0 47 97 62 67 10 15 5 25 0 10 -6 Max Min 0 15 -7
CMOS DRAM
Units Max ns ns 16 128 ms ms ns ns ns ns ns ns ns ns ns 40 ns ns ns ns 200K ns ns 20 ns ns 17 ns ns ns ns ns ns us ns ns
Notes 9 9
tDS tDH tREF tREF tWCS tCWD tRWD tAWD tCPWD tCSR tCHR tRPC tCPT tCPA tPC tPRWC tCP tRASP tRHCP tOEA tOED tOEZ tOEH tWTS tWTH tWRP tWRH tRASS tRPS tCHS
7 7 7 7 7
3
6
14,15,16 14,15,16 14,15,16
KM44C1000D, KM44V1000D
TEST MODE CYCLE
Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time Column Address to RAS lead time CAS to W delay time RAS to W delay time Column Address to W delay time Fast Page mode cycle time Fast Page mode read-modify-write cycle RAS pulse width (Fast Page cycle) Access time from CAS precharge OE access time OE to data delay OE command hold time Note) *1 : 5V only Symbol Min -5*1 Max Min 115 160 55 18 30 55 18 18 55 30 41 78 53 40 81 55 200K 35 20 18 18 20 20 10K 10K 65 20 20 65 35 45 90 60 45 90 65 200K 40 20 25 25 65 20 35 10K 10K 75 25 25 75 40 55 105 70 50 105 75 -6 Max Min 135 190 -7
CMOS DRAM
( Note 11 )
Units Max ns ns 75 25 40 10K 10K ns ns ns ns ns ns ns ns ns ns ns ns ns 200K 45 25 ns ns ns ns ns 3 7 7 7 3,4,10 3,4,5 3,10 Notes
tRC tRWC tRAC tCAC tAA tRAS tCAS tRSH tCSH tRAL tCWD tRWD tAWD tPC tPRWC tRASP tCPA tOEA tOED tOEH
95 138
KM44C1000D, KM44V1000D
NOTES
CMOS DRAM
1. An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved. 2. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3. Measured with a load equivalent to 2 TTL(5V)/1 TTL(3.3V) loads and 100pF. 4. Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC. 5. Assumes that tRCDtRCD(max). 6. This parameter defines the time at which the output achieves the open circuit condition and is not referenced to Voh or Vol. 7. tWCS, tRWD, tCWD, tAWD and tCPWD are non restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCStWCS(min), the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. If tCWDtCWD(min), tRWDtRWD(min), tAWDtAWD(min) and tCPWDtCPWD(min) then the cycle is a read-modify-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the condition of the data out is indeterminate. 8. Either tRCH or tRRH must be satisfied for a read cycle. 9. These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in read-modify-write cycles. 10. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA. 11. These specifiecations are applied in the test mode. 12. In test mode read cycle, the value of tRAC, tAA, tCAC is delayed by 2ns to 5ns for the specified values. These parameters should be specified in test mode cycles by adding the above value to the specified value in this data sheet. 13. tOFF(MAX) defines the time at which the output achieves the open circuit condition and are not referenced to output voltage level. 14. If tRASS100us, then RAS precharge time must use tRPS instead of tRP. 15. For RAS-only refresh and burst CAS-before-RAS refresh mode, 1024(1K) cycle of burst refresh must be executed within 16ms before and after self refresh, in order to meet refresh specification. 16. For distributed CAS-before-RAS with 15.6us interval, CAS-before-RAS refresh should be executed with in 15.6us immediately before and after self refresh in order to meet refresh specification.
KM44C1000D, KM44V1000D
READ CYCLE
CMOS DRAM
tRC tRAS
RAS VIH VIL -
tRP
tCSH tCRP
CAS VIH VIL -
tRCD
tRSH tCAS tRAL tCAH
COLUMN ADDRESS
tCRP
tRAD tASR
A VIH VIL -
tRAH
tASC
ROW ADDRESS
tRCS
W VIH VIL -
tRCH tRRH tOFF tAA tOEZ tOEA tCAC
OE
VIH VIL -
DQ0 ~ DQ3(7) VOH VOL -
tRAC OPEN
tCLZ
DATA-OUT
Dont care Undefined
KM44C1000D, KM44V1000D
WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
tRAS
RAS VIH VIL -
tRC
tRP
tCSH tCRP
CAS VIH VIL -
tRCD
tRSH tCAS tRAL tCAH
COLUMN ADDRESS
tCRP
tRAD tASR
A VIH VIL -
tRAH
tASC
ROW ADDRESS
tCWL tRWL tWCS
W VIH VIL -
tWCH tWP
OE
VIH VIL -
DQ0 ~ DQ3(7) VIH VIL -
tDS
tDH
DATA-IN
Dont care Undefined
KM44C1000D, KM44V1000D
WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
tRC tRAS
RAS VIH VIL -
tRP
tCSH tCRP
CAS VIH VIL -
tRCD
tRSH tCAS tRAL tCAH
COLUMN ADDRESS
tCRP
tRAD tASR tRAH tASC
A
VIH VIL -
ROW ADDRESS
tCWL tRWL
W VIH VIL -
tWP
OE
VIH VIL -
tOED tDS
tOEH tDH
DATA-IN
DQ0 ~ DQ3(7) VIH VIL -
Dont care Undefined
KM44C1000D, KM44V1000D
READ - MODIFY - WRTIE CYCLE
CMOS DRAM
tRWC tRAS
RAS VIH VIL -
tRP
tCRP
CAS VIH VIL -
tRCD tRAD tRAH
tRSH tCAS tCAH tCSH
tASR
VIH VIL -
tASC
COLUMN ADDRESS
A
ROW ADDR
tAWD tCWD
W VIH VIL -
tRWL tCWL tWP
OE
VIH VIL -
tRWD tOEA tCLZ tCAC tAA tRAC
VALID DATA-OUT
tOED tOEZ
DQ0 ~ DQ3(7) VI/OH VI/OL -
tDS
tDH
VALID DATA-IN
Dont care Undefined
KM44C1000D, KM44V1000D
FAST PAGE READ CYCLE
CMOS DRAM
tRASP
RAS VIH VIL o
tRP tRHCP
tCRP
CAS VIH VIL -
tPC tRCD tCAS tRAD tASC tCSH tCAH
COLUMN ADDRESS
tCP tCAS
o
tCP
tRSH tCAS
tASR
A VIH VIL ROW ADDR
tRAH
tASC
tCAH
o o
tASC
tCAH
COLUMN ADDRESS
COLUMN ADDRESS
tRCS
W VIH VIL -
tRCH
tRCS
o
tRAL tRCS
tRRH tRCH
tCAC tOEA
OE VIH VIL -
tCAC tOEA
o o
tCAC tOEA
tAA
DQ0 ~ DQ3(7) VOH VOL -
tRAC tCLZ
tOEZ
VALID DATA-OUT
tAA tOFF tCLZ
tOEZ
VALID DATA-OUT
tAA tOFF tCLZ
VALID DATA-OUT
tOFF tOEZ
Dont care Undefined
KM44C1000D, KM44V1000D
FAST PAGE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
tRASP
RAS VIH VIL o
tRP tRHCP
tCRP
CAS VIH VIL -
tPC tRCD tCAS tRAD tASC tCP tCAS
o
tPC tCP tRSH tCAS tRAL
tASR
A VIH VIL -
tRAH
tCSH tCAH
COLUMN ADDRESS
tASC
tCAH
o o
tASC
tCAH
ROW ADDR
COLUMN ADDRESS
COLUMN ADDRESS
tWCS
W VIH VIL -
tWCH tWP tCWL
tWCS tWP
tWCH
o
tWCS
tWCH tWP tCWL tRWL
tCWL
o o
OE
VIH VIL -
DQ0 ~ DQ3(7) VIH VIL -
tDS
tDH
tDS
tDH
o
tDS
tDH
VALID DATA-IN
VALID DATA-IN
o
VALID DATA-IN
Dont care Undefined
KM44C1000D, KM44V1000D
FAST PAGE READ - MODIFY - WRITE CYCLE
CMOS DRAM
tRASP
RAS VIH VIL -
tRP
tCSH tRCD tRSH tCP tCAS tRAD tRAH tASR tASC
COL. ADDR
tCRP tCAS tPRWC
CAS
VIH VIL -
tCAH
tRAL tASC
COL. ADDR
tCAH
A
VIH VIL -
ROW ADDR
tRCS
W VIH VIL -
tRWL tCWL tWP tCWD tAWD tRWD tOEA tOED tCAC tAA tOEZ tDH tDS tCWD tAWD tCPWD tOEA tCAC tAA tOEZ tOED tDH tDS tCWL tWP
OE
VIH VIL -
DQ0 ~ DQ3(7) VI/OH VI/OL -
tRAC tCLZ
tCLZ
VALID DATA-OUT VALID DATA-IN VALID DATA-OUT VALID DATA-IN
Dont care Undefined
KM44C1000D, KM44V1000D
RAS - ONLY REFRESH CYCLE
NOTE : W, OE, DIN = Dont care DOUT = OPEN tRC tRP
CMOS DRAM
tRAS
RAS VIH VIL -
tCRP
CAS VIH VIL -
tRPC
tCRP
tASR
A VIH VIL ROW ADDR
tRAH
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE, A = Dont care tRC tRP
RAS VIH VIL -
tRAS
tRP
tRPC tCP tRPC tCSR tWRP tWRH tCHR
CAS
VIH VIL -
W
VIH VIL -
DQ0 ~ DQ3(7) VOH VOL -
tOFF OPEN
Dont care Undefined
KM44C1000D, KM44V1000D
HIDDEN REFRESH CYCLE ( READ )
CMOS DRAM
tRC tRAS
RAS VIH VIL -
tRC tRP tRAS tRP
tCRP
CAS VIH VIL -
tRCD
tRSH
tCHR
tRAD tASR
A VIH VIL -
tRAH
tASC
tCAH
COLUMN ADDRESS
ROW ADDRESS
tRAL tRCS
W VIH VIL -
tWRH
tAA
OE VIH VIL -
tOEA tCAC tOFF tOEZ
DATA-OUT
DQ0 ~ DQ3(7) VOH VOL -
tRAC OPEN
tCLZ
Dont care Undefined
KM44C1000D, KM44V1000D
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
tRC
RAS VIH VIL -
tRC tRP tRAS tRP
tRAS
tCRP
CAS VIH VIL -
tRCD tRAD
tRSH
tCHR
tASR
A VIH VIL -
tRAH
tASC
tCAH
COLUMN ADDRESS
ROW ADDRESS
tRAL
VIH VIL -
tWRH tWRP
tWCS tWP
tWCH
W
OE
VIH VIL -
tDS
DQ0 ~ DQ3(7) VIH VIL -
tDH
DATA-IN
Dont care Undefined
KM44C1000D, KM44V1000D
CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE
CMOS DRAM
tRP
RAS
VIH VIL VIH VIL -
tRAS tCPT tCHR tRSH tCAS tRAL tASC tCAH
tCSR
CAS
A
VIH VIL -
COLUMN ADDRESS
READ CYCLE
W VIH VIL VIH VIL -
tWRP
tWRH
tRCS
tAA tCAC
tRRH tRCH
OE
DQ0 ~ DQ3(7)
VOH VOL -
tCLZ
tOEA
tOEZ
DATA-OUT
WRITE CYCLE
W VIH VIL VIH VIL -
tOFF tWRP tWRH tWCS tRWL tCWL tWCH tWP
OE
tDS
DQ0 ~ DQ3(7) VIH VIL -
tDH
DATA-IN
READ-MODIFY-WRITE
tWRP
W VIH VIL -
tWRH
tRCS
tAWD tCWD tCAC tWP
tCWL tRWL
tAA tOEA
OE VIH VIL -
tOED tCLZ tOEZ tDS
tDH
DQ0 ~ DQ3(7)
VI/OH VI/OL VALID DATA-OUT VALID DATA-IN
Dont care Undefined
KM44C1000D, KM44V1000D
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE, A = Dont care
CMOS DRAM
tRP
RAS VIH VIL -
tRASS
tRPS tRPC tCHS
tRPC tCP
CAS
VIH VIL -
tCSR
DQ0 ~ DQ3(7) VOH VOL -
tOFF OPEN tWRP tWRH
W
VIH VIL -
TEST MODE IN CYCLE
NOTE : OE, A = Dont care
tRC tRP
RAS VIH VIL -
tRAS
tRP
tRPC tCP tRPC tCSR tWTS tWTH tCHR
CAS
VIH VIL -
W
VIH VIL -
DQ0 ~ DQ3(7) VOH VOL -
tOFF OPEN
Dont care Undefined
KM44C1000D, KM44V1000D
PACKAGE DIMENSION
26(20) SOJ 300mil
CMOS DRAM
Units : Inches (millimeters)
#26(20) 0.300 (7.62) 0.260 (6.61) 0.330 (8.39) 0.340 (8.63) 0.280 (7.11)
0.006 (0.15) 0.012 (0.30)
0.027 (0.69) MIN 0.691 (17.55) MAX 0.670 (17.03) 0.680 (17.27) 0.148 (3.76) MAX 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53)
0.0375 (0.95)
0.050 (1.27)
26(20) TSOP(II) 300mil
Units : Inches (millimeters)
0.355 (9.02) 0.371 (9.42)
0.300 (7.62)
0.004 (0.10) 0.010 (0.25)
0.691 (17.54) MAX 0.671 (17.04) 0.679 (17.24) 0.047 (1.20) MAX 0.010 (0.25) TYP 0.018 (0.45) 0.030 (0.75) 0~8
O
0.037 (0.95)
0.050 (1.27)
0.002 (0.05) MIN 0.012 (0.30) 0.020 (0.50)

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